AF9945N n-channel enha ncement mode power mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.0 oct 12, 2004 1/5 ? features - low on-resistance - single drive requirement - surface mount package ? product summary bv dss (v) r ds(on) (m ? ) i d (a) 60 90 3.5 ? pin assignments sop-8 5 6 7 8 4 3 2 1 d1 d1 d2 d2 s1 g1 s2 g2 ? general description the advanced power mosfet provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ? pin descriptions pin name description s1/2 source g1/2 gate d1/2 drain ? ordering information a x 9945n x x x pn package feature f :mosfet s: sop-8 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel
AF9945N n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 12, 2004 2/5 ? absolute maxi mum ratings symbol parameter rating units v ds drain-source voltage 60 v v gs gate-source voltage 25 v t a =25oc 3.5 i d continuous drain current (note 1) t a =70oc 2.8 a i dm pulsed drain current (note 2) 20 a total power dissipation t a =25oc 2 w p d linear derating factor 0.016 w/oc t stg storage temperature range -55 to 150 oc t j operating junction temperature range -55 to 150 oc ? thermal resistance ratings symbol parameter value units rthj-a thermal resistance junction-ambient (note 1) max. 62.5 o c/w note 1: surface mounted on 1 in 2 copper pad of fr4 board, t 10sec; 135 o c/w when mounted on min. copper pad. note 2: pulse width limited by max. junction temperature. ? electrical characteristics at t j =25oc (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 o c, i d =1ma - 0.04 - v/ o c v gs =10v, i d =3a - - 90 m ? r ds(on) static drain-source on-resistance (note 3) v gs =4.5v, i d =2a - - 120 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =3a - 6 - s v ds =60v, v gs =0v, t j =25oc - - 10 ua i dss drain-source leakage current v ds =48v, v gs =0v, t j =70oc - - 25 ua i gss gate-source leakage v gs =25v - - 100 na q g total gate charge (note 3) - 6 10 nc q gs gate-source charge - 2 - nc q gd gate-drain (?miller?) charge i d =3a, v ds =48v, v gs =4.5v - 3 - nc t d(on) turn-on delay time (note 3) - 6 - ns t r rise time - 5 - ns t d(off) turn-off delay time - 16 - ns t f fall-time v ds =30v, i d =1a, r g =3.3 ? , v gs =10v r d =30 ? - 3 - ns c iss input capacitance - 510 810 pf c oss output capacitance - 55 - pf c rss reverse transfer capacitance v gs =0v, v ds =25v, f=1.0mhz - 35 - pf r g gate resistance f=1.0mhz - 1.3 - ? ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage (note 3) i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time (note 3) - 27 - ns q rr reverse recovery charge i s =4a, v gs =0v, dl/dt=100a/s - 32 - nc note3: pulse width 300us, duty cycle 2%.
AF9945N n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 12, 2004 3/5 ? typical performance characteristics fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of reverse diode fig 6. gate threshold voltage v.s. junction temperature
AF9945N n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 12, 2004 4/5 ? typical performance charact eristics (c ontinued) fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform
AF9945N n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 12, 2004 5/5 ? marking information sop-8l ( top view ) 1 8 9 9 4 5 n aa y w x year code: part number lot code: week code: factory code "a~z": 01~26; "a~z": 27~52 "4" =2004 ~ "a~z": 01~26; "a~z": 27~52 "x": non-lead free; "x": lead free logo ? package information package type: sop-8l view "a" l c view "a" h e a a2 a1 b e d 7 (4x) 0.015x45 7 (4x) y dimensions in millimeters dimensions in inches symbol min. nom. max. min. nom. max. a 1.40 1.60 1.75 0.055 0.063 0.069 a1 0.10 - 0.25 0.040 - 0.100 a2 1.30 1.45 1. 50 0.051 0.057 0.059 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.19 0.20 0.25 0.0075 0.008 0.010 d 4.80 5.05 5.30 0.189 0.199 0.209 e 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - h 5.79 5.99 6.20 0.228 0.236 0.244 l 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004 0 o - 8 o 0 o - 8 o
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